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Gallium arsenide films on recrystallized germanium films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.323483· OSTI ID:7211193
Germanium films deposited on tungsten/graphite substrates have been recrystallized by a unidirectional solidification technique. Gallium arsenide films deposited on recrystallized germanium have elogated grains with a strong )111) preferred orientation and are epitaxial with respect to the substrate. The deposited films have a room-temperature Hall mobility of 600--700 cm/sup 2//V sec and electron concentration of (1--3) x 10/sup 17/ cm/sup -3/.
Research Organization:
Southern Methodist University, Dallas, Texas 75275
OSTI ID:
7211193
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:11; ISSN JAPIA
Country of Publication:
United States
Language:
English