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U.S. Department of Energy
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Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, September 1, 1976--November 30, 1976

Technical Report ·
OSTI ID:6882484
Efforts have been directed to the construction of gallium arsenide deposition apparatus, the preparation of substrates, and the deposition of gallium arsenide films. Two gallium arsenide deposition systems suitable for the deposition of uniform gallium arsenide films on large area substrates by the reaction of gallium, hydrogen chloride, and arsine have been constructed. Germanium and tungsten films were deposited on graphite supports by the thermal reduction of germanium tetrachloride and tungsten hexafluoride, respectively. Both films are polycrystalline with crystallite size of 5-40 ..mu..m. Attempts to increase the crystallite size in germanium were not successful since molten germanium was not wet by graphite. This problem was overcome by using a tungsten interlayer. Gallium arsenide films have been deposited on single crystalline gallium arsenide, single crystalline germanium, tungsten/graphite, and germanium (recrystallized)/tungsten/graphite substrates. Gallium arsenide films deposited on single crystalline gallium arsenide and germanium substrates were epitaxial with respect to the substrate. Gallium arsenide films deposited on tungsten/graphite substrates were uniform with an average crystallite size of about 10 ..mu..m, while those on germanium (recrystallized)/tungsten/graphite substrates were non-uniform with considerably larger crystallites. The use of germanium (recrystallized)/tungsten/graphite as a substrate for the deposition of gallium arsenide films appears to be encouraging.
Research Organization:
Southern Methodist Univ., Dallas, Tex. (USA)
OSTI ID:
6882484
Report Number(s):
SAN-1284-T1
Country of Publication:
United States
Language:
English