Interface formation and growth of InSb on Si(100)
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States) Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)
High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4{degree} off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410 {degree}C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 7207170
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 45:7; ISSN PRBMD; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANTIMONIDES
ANTIMONY COMPOUNDS
AUGER ELECTRON SPECTROSCOPY
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
EPITAXY
GROWTH
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
INTERFACES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHOTOEMISSION
PNICTIDES
SCATTERING
SECONDARY EMISSION
SEMIMETALS
SILICON
SPECTROSCOPY
X-RAY DIFFRACTION
360602* -- Other Materials-- Structure & Phase Studies
ANTIMONIDES
ANTIMONY COMPOUNDS
AUGER ELECTRON SPECTROSCOPY
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
EPITAXY
GROWTH
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
INTERFACES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHOTOEMISSION
PNICTIDES
SCATTERING
SECONDARY EMISSION
SEMIMETALS
SILICON
SPECTROSCOPY
X-RAY DIFFRACTION