Core-level photoemission studies of the. cap alpha. -Sn/InSb(100) heterostructure system

Journal Article · Wed Feb 15 04:00:00 EST 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.3223· OSTI ID:6592476

John, P; Miller, T; Chiang, T

Layers of gray tin (..cap alpha..-Sn) were grown epitaxially on InSb(100) substrates at room temperature. The two high-quality InSb(100) reconstructions, Sb-stabilized c(4 x 4) and In-stabilized c(8 x 2), were used for starting surfaces. Core-level photoemission and electron diffraction were used to study the development of the interface as a function of Sn coverage and to determine the discontinuity in the valence-band maximum. For both starting surfaces, there was evidence for some Sb segregation into the Sn films during the initial stages of interface formation; the c(4 x 4) surface showed an earlier onset for the segregation. The Sn growth was found to be fairly flat for the first two layers, and three dimensional after that. The final valence-band discontinuity was found to be the same for both the c(4 x 4) and the c(8 x 2) starting surfaces. This discontinuity was compared to present theoretical predictions.

• Research Organization: Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801
• OSTI ID: 6592476
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:5; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONY COMPOUNDS
BAND THEORY
CHARGED-PARTICLE TRANSPORT
COHERENT SCATTERING
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
EPITAXY
HETEROJUNCTIONS
INDIUM COMPOUNDS
JUNCTIONS
METALS
PHOTOEMISSION
RADIATION TRANSPORT
SCATTERING
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
TIN