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Ion induced atom motion effects studied using Monte Carlo computer simulation, loss of target mass, and secondary-electron imaging of the surface

Thesis/Dissertation ·
OSTI ID:7204822

The investigation of some effects of the bombardment of material surfaces by keV ions has been carried out using a Monte Carlo computer simulation. This code models the target as an amorphous semi-infinite solid. Up to three elements may be used in the solid. The target's composition change during bombardment is simulated. Of the many phenomena taking place during the bombardment the simulation program will be used to study the dose dependence of the sputtering yield and ion-induced Auger electron emission. The study concludes that implanted Ar beam atoms do not alter the kinematics of the target by the amount necessary to cause the experimentally observed increase in the sputtering yield of Si. The computer study also suggests that for Ar bombardment of Al and Si the Auger electrons are predominantly from sputtered atoms. A novel technique for cleaning the surface of a liquid is described. This method has been used to obtain a highly clean surface on a liquid Ga drop. The surface flow generated by the ion bombardment is discussed. The circuit and structure of a quartz crystal third overtone resonator is presented. The resonator is designed for use in making dose dependent sputtering yield measurements. This apparatus can detect the removal of a fraction of a monolayer from a thin film that has been evaporated on its surface.

Research Organization:
Maryland Univ., Baltimore (USA)
OSTI ID:
7204822
Country of Publication:
United States
Language:
English