Monte Carlo studies of sputtering

Conference · Sat Apr 01 04:00:00 EST 1978

OSTI ID:7018041

Haggmark, L G; Wilson, W D

A computer program has been developed to simulate the sputtering process using the Monte Carlo method and the binary collision approximation. This program is a result of the generalization of the TRIM computer program such that the target atom trajectories are followed in addition to those of the incident particles. This program, which includes electronic energy loss, uses an analytic formula which is based on realistic interatomic potentials for determining particle scattering angles and the energy transfer to target atoms. A model of the sputtering process has been developed for physically defining the surface and bulk binding energies necessary for calculations. A number of sputtering yield calculations have been performed for H, D, T, and /sup 4/He ions incident on C, Ni, Mo, and Au targets for energies less than 10 keV. The validity of the Monte Carlo model is demonstrated by the good agreement between the calculated results and the most recent experiments.

• Research Organization: Sandia Labs., Livermore, Calif. (USA)
• DOE Contract Number: EY-76-C-04-0789
• OSTI ID: 7018041
• Report Number(s): SAND-77-8755; CONF-780431-9
• Country of Publication: United States
• Language: English

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BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CARBON
COMPUTER CODES
CRYOGENIC FLUIDS
DEUTERIUM
ELEMENTS
ENERGY LOSSES
EVEN-EVEN NUCLEI
FLUIDS
GOLD
HELIUM 4
HELIUM ISOTOPES
HYDROGEN
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
METALS
MOLYBDENUM
MONTE CARLO METHOD
NICKEL
NONMETALS
NUCLEI
ODD-EVEN NUCLEI
ODD-ODD NUCLEI
RADIOISOTOPES
REFRACTORY METALS
SIMULATION
SPUTTERING
STABLE ISOTOPES
TARGETS
THERMONUCLEAR REACTOR MATERIALS
TRANSITION ELEMENTS
TRITIUM
YEARS LIVING RADIOISOTOPES