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U.S. Department of Energy
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Monte Carlo studies of sputtering

Conference ·
OSTI ID:7018041

A computer program has been developed to simulate the sputtering process using the Monte Carlo method and the binary collision approximation. This program is a result of the generalization of the TRIM computer program such that the target atom trajectories are followed in addition to those of the incident particles. This program, which includes electronic energy loss, uses an analytic formula which is based on realistic interatomic potentials for determining particle scattering angles and the energy transfer to target atoms. A model of the sputtering process has been developed for physically defining the surface and bulk binding energies necessary for calculations. A number of sputtering yield calculations have been performed for H, D, T, and /sup 4/He ions incident on C, Ni, Mo, and Au targets for energies less than 10 keV. The validity of the Monte Carlo model is demonstrated by the good agreement between the calculated results and the most recent experiments.

Research Organization:
Sandia Labs., Livermore, Calif. (USA)
DOE Contract Number:
EY-76-C-04-0789
OSTI ID:
7018041
Report Number(s):
SAND-77-8755; CONF-780431-9
Country of Publication:
United States
Language:
English