GaInP mass transport and GaInP/GaAs buried-heterostructure lasers

Journal Article · Sun Jan 21 23:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102813· OSTI ID:7199787

Groves, S H; Liau, Z L; Palmateer, S C; Walpole, J N ^[1]

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1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108 (US)

Mass transport of a semiconductor alloy has been demonstrated using Ga{sub 0.51}In{sub 0.49}P which is lattice matched to GaAs. Buried-heterostructure diode lasers with Ga{sub 0.51}In{sub 0.49}P as cladding and GaAs as the active layer have been made using this fabrication technique. Initial attempts produce devices with room-temperature lasing thresholds of {similar to}33 mA and 15% differential power efficiency per facet.

• OSTI ID: 7199787
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:4; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
ENERGY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD ENERGY