Gain mass transport and GaInP/GaAs buried-heterostructure lasers

Technical Report · Sun Jan 21 23:00:00 EST 1990

OSTI ID:6733605

Groves, S H; Liau, Z L; Palmateer, S C; Walpole, J N

Mass transport of a semiconductor alloy has been demonstrated using Ga(0.51)In(0.49)P which is lattice matched to Gallium Arsenide. Buried-heterostructure diode lasers with Ga(0.51)In(0.49)P as cladding and GaAs as the active layer have been made using this fabrication technique. Initial attempts produce devices with room-temperature lasing thresholds of approx. 33 mA and 15% differential power efficiency per facet.

• Research Organization: Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
• OSTI ID: 6733605
• Report Number(s): AD-A-220227/3/XAB; JA--6386
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALLOYS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CLADDING
DEPOSITION
EPITAXY
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
LAYERS
MASS TRANSFER
MATERIALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
SURFACE COATING
VAPOR PHASE EPITAXY