skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Physicochemical behavior of thallium in indium antimonide

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:7195406

This paper reports the physicochemical factors involved in the interaction components in the ternary system In-Sb-Tl and the effect of thalliu on indium antimonide properties. It is shown that ternary compounds are not formed in the In-Sb-Tl quasi-binary cross section. Despite the indium and thallium being closely related group III elements with similar electron configurations and tetrahedral covalent radii, the indium antimonide region of homogeneity in the In-Sb-Tl system, drawn along the quasi-binary InSb-Tl cross section, was only slight (0.2 at. % Tl).

Research Organization:
M.V. Lomonosov Moscow Institute of Fine Chemical Tech.
OSTI ID:
7195406
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:12
Country of Publication:
United States
Language:
English