Low frequency pressure modulation of indium antimonide
Journal Article
·
· Review of Scientific Instruments
- University of Texas at Austin, Austin, Texas 78712-0240 (United States)
- ExxonMobil Upstream Research Company, Houston, Texas 77252-2189 (United States)
A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient {alpha} of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.
- OSTI ID:
- 22093669
- Journal Information:
- Review of Scientific Instruments, Vol. 83, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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