Application of a CF/sub 3//sup +/ primary ion source for depth profiling in secondary ion mass spectrometry

Journal Article · Fri Jul 15 04:00:00 EDT 1988 · Anal. Chem.; (United States)

DOI:https://doi.org/10.1021/ac00165a011· OSTI ID:7191455

Reuter, W; Scilla, G J

The authors have used a CF/sub 3//sup +/ primary ion source for some typical depth profiling applications in secondary ion mass spectrometry and compared its performance with the conventionally used O/sub 2//sup +/ source. At the same accelerating potential, steady-state secondary ion emission conditions are reached much faster under CF/sub 3//sup +/ than under O/sub 2//sup +/ bombardment. Shallow implant profiles can be measured with better definition. This improvement is directly related to the shorter converted layer range produced at 5 keV CF/sub 3//sup +/ versus 5 keV O/sub 2//sup +/. The better depth solution found under CF/sub 3//sup +/ bombardment may also be rationalized by the same reason of a shorter intermixed range at the interface. However, this is shown at least in part to be due to a smoother surface generated compared to the surface after O/sub 2//sup +/ bombardment.

• Research Organization: IBM T.J. Watson Research Center, Yorktown Heights, NY (USA)
• OSTI ID: 7191455
• Journal Information: Anal. Chem.; (United States), Journal Name: Anal. Chem.; (United States) Vol. 60:14; ISSN ANCHA
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400102* -- Chemical & Spectral Procedures
ALUMINIUM
ARSENIC
BORON
CATIONS
CHARGED PARTICLES
CHEMICAL ANALYSIS
COPPER
DATA
DISTRIBUTION
ELEMENTS
EXPERIMENTAL DATA
FLUORINATED ALIPHATIC HYDROCARBONS
GALLIUM
HALOGENATED ALIPHATIC HYDROCARBONS
INFORMATION
ION MICROPROBE ANALYSIS
ION SOURCES
IONS
MASS SPECTROSCOPY
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
SEMIMETALS
SILICON
SPATIAL DISTRIBUTION
SPECTROSCOPY
TRANSITION ELEMENTS