Identification, simulation and avoidance of artifacts in ultra-shallow depth profiling by secondary ion mass spectrometry
- GSF-National Research Center for Environment and Health, Institute of Radiation Protection, D-85758 Neuherberg (Germany)
- ATOMIKA Instruments GmbH, Bruckmannring 4O, D-85764 Oberschleissheim (Germany)
- Intel Components TD Q and R, MS RA1-329, Hillsboro, Oregon 97212 (United States)
Distortions and shifts of shallow implantation distributions of B in Si, recently observed in depth profiling by secondary ion mass spectrometry (SIMS) using 1.9 keV O{sub 2}{sup +} ions at oblique incidence ({approx}60 deg.) with oxygen flooding, have been reproduced at a beam energy of 1 keV. Measurements on samples containing a series of delta doping spikes revealed a pronounced initial drop in erosion rate followed by a more gradual decrease extending to at least 200 nm. These changes give rise to severe errors in depth calibration (shift up to 4 nm). The artifacts are due to bombardment-induced oxygen incorporation and surface roughening (ripple formation), the latter effect also causing a pronounced degradation in depth resolution. The essential features of the observed profile distortions can be simulated by a simple model. Ripple formation is not observed with normally incident oxygen beams in vacuum, in which case profiles with excellent resolution and minimum shift can be obtained, notably at ultra-low probe energy.
- OSTI ID:
- 21202339
- Journal Information:
- AIP Conference Proceedings, Vol. 449, Issue 1; Conference: 1998 international conference on characterization and metrology for ULSI technology, Gaithersburg, MD (United States), 23-27 Mar 1998; Other Information: DOI: 10.1063/1.56920; (c) 1998 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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