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Range and thermal-behavior studies of Au and Bi implanted into photoresist films

Journal Article · · Physical Review, B: Condensed Matter; (USA)
; ; ; ;  [1];  [2]; ;  [3]
  1. Instituto de Fisica, Universidade Federal do Rio Grande do Sul, 91500 Porto Alegre, Rio Grande do Sul, Brazil (BR)
  2. Instituto de Fisica, Universidade Federal Fluminense, 24001 Niteroi, Rio de Janeiro, Brazil (BR)
  3. Hahn-Meitner-Institut, D-1000 Berlin, West Germany (DE)
The Rutherford backscattering technique has been used to determine range parameters of Au and Bi ions implanted into AZ1350 photoresist films at energies from 20 to 300 keV. The experimental results are 20 to 25% higher than the theoretical predictions by Ziegler, Biersack, and Littmark. Good agreement is achieved only when inelastic effects are included in the nuclear stopping-power regime. In addition, we find that shallow implantation of Bi ions increases the temperature at which the photoresist starts to decompose. This feature is not observed when Au is implanted under the same conditions. Finally, we have studied the thermal behavior of implanted Bi and Au ions. While Bi diffuses regularly, Au does not follow an Arrhenius kind of behavior. In addition, it is shown that the implantation process modifies, via the nonannealed damage, the characteristics of the Bi diffusion behavior.
OSTI ID:
7186852
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:10; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English

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