Thermal behavior and range distribution of /sup 209/Bi implanted into the Al/V bilayer structure
Journal Article
·
· J. Appl. Phys.; (United States)
350-keV /sup 209/Bi/sup +/ was implanted into an Al (1000 A)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (t-smcapsr-smcapsIm-smcaps code). Diffusion coefficients for Bi in both the V substrate of the Al/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 /sup 0/C. The results show that the Bi ions follow a hindered diffusion at the Al film of the Al/V bilayer and for temperatures higher than 580 /sup 0/C diffuse regularly in the V bulk.
- Research Organization:
- Instituto de Fisica, Universidade Federal do Rio Grande do Sul, 90049 Porto Alegre, RS, Brazil
- OSTI ID:
- 5419799
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:9; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ALUMINIUM
ATOM TRANSPORT
BISMUTH 209
BISMUTH IONS
BISMUTH ISOTOPES
CHARGED PARTICLES
DATA
DIFFUSION
DIMENSIONS
ELEMENTS
ENERGY RANGE
EXPERIMENTAL DATA
FILMS
HEAVY NUCLEI
HIGH TEMPERATURE
INFORMATION
ION IMPLANTATION
IONS
ISOTOPES
KEV RANGE
KEV RANGE 100-1000
LAYERS
MEDIUM TEMPERATURE
METALS
NEUTRAL-PARTICLE TRANSPORT
NUCLEI
NUMERICAL DATA
ODD-EVEN NUCLEI
RADIATION TRANSPORT
STABLE ISOTOPES
THICKNESS
THIN FILMS
TRANSITION ELEMENTS
VANADIUM
VERY HIGH TEMPERATURE
360104* -- Metals & Alloys-- Physical Properties
ALUMINIUM
ATOM TRANSPORT
BISMUTH 209
BISMUTH IONS
BISMUTH ISOTOPES
CHARGED PARTICLES
DATA
DIFFUSION
DIMENSIONS
ELEMENTS
ENERGY RANGE
EXPERIMENTAL DATA
FILMS
HEAVY NUCLEI
HIGH TEMPERATURE
INFORMATION
ION IMPLANTATION
IONS
ISOTOPES
KEV RANGE
KEV RANGE 100-1000
LAYERS
MEDIUM TEMPERATURE
METALS
NEUTRAL-PARTICLE TRANSPORT
NUCLEI
NUMERICAL DATA
ODD-EVEN NUCLEI
RADIATION TRANSPORT
STABLE ISOTOPES
THICKNESS
THIN FILMS
TRANSITION ELEMENTS
VANADIUM
VERY HIGH TEMPERATURE