Ion implantation in. beta. -SiC: Effect of channeling direction and critical energy for amorphization

Journal Article · Tue Mar 01 04:00:00 EST 1988 · J. Mat. Res.; (United States)

OSTI ID:5443698

Edmond, J A; Davis, R F; Withrow, S P; More, K L

Damage in single-crystal ..beta..-SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering/channeling and cross-section transmission electron microscopy. Samples were implanted with Al (130 keV) and Si (87 keV) with doses between 4 and 20 x 10/sup 14/ cm/sup -2/ at liquid nitrogen and room temperatures. Backscattering spectra for He/sup +/ channeling as a function of implantation dose were initially obtained in the (110) direction to determine damage accumulation. However, the backscattered yield along this direction was shown to be enhanced as a result of uniaxial implantation-induced strain along (100). Spectra obtained by channeling along this latter direction were used along with the computer program t-smcapsr-smcapsIm-smcaps to calculate the critical energy for amorphization. The results for amorphization of ..beta..-SiC at liquid nitrogen and room temperature are approx.14.5 eV/atom and approx.22.5 eV/atom, respectively.

• Research Organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
• OSTI ID: 5443698
• Journal Information: J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 3:2; ISSN JMREE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ALUMINIUM IONS
AMORPHOUS STATE
BACKSCATTERING
CARBIDES
CARBON COMPOUNDS
CHANNELING
CHARGED PARTICLES
CRYSTALS
ELECTRON MICROSCOPY
FILMS
HELIUM IONS
ION CHANNELING
ION IMPLANTATION
IONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MICROSCOPY
MONOCRYSTALS
SCATTERING
SILICON CARBIDES
SILICON COMPOUNDS
SILICON IONS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY