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Computer simulation of damage processes during ion implantation

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.339400· OSTI ID:6038535
A new version for the m-smcapsa-smcapsr-smcapsl-smcapso-smcapsw-smcapse-smcaps code, which enables dynamic simulation of damage processes during ion implantation to be performed, has been developed. This simulation code is based on uses of the Ziegler--Biersack--Littmark potential (in Proceedings of the International Engineering Congress on Ion Sources and Ion-Assisted Technology, edited by T. Takagi (Ionic Co., Tokyo, 1983), p. 1861) for elastic scattering and Firsov's equation (O. B. Firsov, Sov. Phys. JETP 61, 1453 (1971)) for electron stopping.
Research Organization:
Department of Physics, Chungbuk National University, Cheongju, Chungbuk 310, Korea
OSTI ID:
6038535
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:7; ISSN JAPIA
Country of Publication:
United States
Language:
English