Synchrotron radiation studies of diamond nucleation and growth on Si
- Synchrotron Radiation Center, Department of Chemistry, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589-3097 (United States)
- W. R. Grace Co., Washington Research Center, 7379 Route 32, Columbia, Maryland 21044 (United States)
- Synchrotron Radiation Center, Department of Physics, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589-3097 (United States)
- Department of Chemistry, University of Wisconsin-Madison, Madison Wisconsin 53706 (United States)
- Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)
Valence-band as well as Si(2[ital p]) and C(1[ital s]) core-level photoemission, Auger, and near-edge x-ray-absorption fine-structure spectroscopies were used to follow the surface chemistry associated with diamond film deposition with a filament-assisted chemical-vapor-deposition reactor on atomically clean and diamond polished Si(100) and Si(111) surfaces. Raman spectroscopy and atomic force microscopy (AFM) were also used [ital ex] [ital situ] to characterize the deposited films. Within 3 min of deposition, a carbon-rich SiC layer, at least 13 A thick, was observed to develop. At early stages of growth ([lt]10 min of deposition), no differences were observed between the clean and diamond-polished surfaces. With additional deposition, a 20--30-A-thick amorphous carbon overlayer was deposited on the clean Si surfaces: The amorphous carbon layer did not promote diamond nucleation. Deposition of an [ital a]-C:H layer on top of the amorphous carbon layer also did not promote diamond nucleation. In contrast, [similar to]500 A diamond films were deposited within 45--60 min on the diamond-polished surfaces. Two types of nuclei were observed following 20 min of deposition by atomic force microscopy: (1) large (200--300 nm in diameter) nuclei, randomly distributed on the surface; and (2) smaller (50--100 nm) nuclei that show a preference for forming along the scratches. Atomic force micrographs of the originally clean surface show the formation of sharp relief structures on the surface. These structures, combined with the amorphous carbon overlayer, may be responsible for the few sites that do nucleate diamond on unpolished Si surfaces.
- DOE Contract Number:
- W-31-109-ENG-38
- OSTI ID:
- 7181216
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 76:9; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
DIAMONDS
NUCLEATION
SYNCHROTRON RADIATION
USES
CHEMICAL VAPOR DEPOSITION
ELECTRONIC STRUCTURE
PHOTOEMISSION
RAMAN SPECTRA
SILICON
THIN FILMS
BREMSSTRAHLUNG
CARBON
CHEMICAL COATING
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTAL MINERALS
ELEMENTS
EMISSION
FILMS
MINERALS
NONMETALS
RADIATIONS
SECONDARY EMISSION
SEMIMETALS
SPECTRA
SURFACE COATING
360602* - Other Materials- Structure & Phase Studies