Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron--irradiated n-GaAs

Journal Article · Sun Aug 01 04:00:00 EDT 1976 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.323161· OSTI ID:7180015

Lang, D V; Kimerling, L C; Leung, S Y

Recombination-enhanced annealing of the E1 (E/subc/-0.08 eV) and E2 (E/subc/-0.18 eV) defect levels in n-GaAs has been studied by deep-level transient spectroscopy (DLTS). The defects are controllably introduced at room temperature by irradiation with 1-MeV electrons. Thermal annealing at reverse and zero bias yields an activation energy of ..delta..E=1.75 +- 0.17 eV and shows that charge-state effects are not operative. Recombination annealing produces an enhancement of several orders of magnitude in the annealing rate and an activation energy of 0.98 +- 0.10 eV. The annealing reaction obeys first-order kinetics and does not saturate with injection currents up to 350 A/cm/sup 2/. The relationship of this data to earlier observations of recombination-enhanced annealing (motion) in GaAs and GaP is discussed as well as the possible implications for injection-mode device degradation. (AIP)

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 7180015
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON BEAMS
ENERGY
ENERGY LEVELS
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IRRADIATION
LEPTON BEAMS
MEV RANGE
MEV RANGE 01-10
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RECOMBINATION
SPECTROSCOPY