Injection-enhanced annealing of InP solar-cell radiation damage
This paper demonstrates that minority-carrier injection due to forward bias and light illumination under low current density and short-time injection conditions at room temperature can lead to enhanced recovery of radiation-induced defects in p-InP and radiation damage in InP n/sup +/-p junction solar cells. Deep-level transient spectroscopy analysis shows that the major defect centers H4 (E/sub V/ +0.37 eV) and E2 (E/sub C/ -0.19 eV) in p-InP exhibit injection-enhanced annealing which is a recombination-enhanced effect with a reduced activation energy of 0.133 eV. The marked recovery of the InP n/sup +/-p solar-cell radiation damage due to minority-carrier injection mainly results from recovery in minority-carrier diffusion length and decrease in recombination current. These mainly originate from the annihilation of the major defect centers H4 and E2 in the p-InP layer due to injection.
- Research Organization:
- Ibaraki Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation, Tokai, Ibaraki-ken 319-11, Japan
- OSTI ID:
- 5586068
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:1; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
CHARGE CARRIERS
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRON COLLISIONS
EQUIPMENT
HEAT TREATMENTS
INDIUM PHOSPHIDE SOLAR CELLS
JUNCTIONS
LENGTH
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY