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Minority-carrier injection annealing of electron irradiation-induced defects in InP solar cells

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.94756· OSTI ID:5191299

The first observation of minority-carrier injection annealing of radiation-induced defects in InP is reported. Minority-carrier injection due to both forward bias application and light illumination at room temperature after electron irradiation is shown to enhance defect annealing in p-InP and to result in the recovery of InP solar cell properties. These results suggest that most InP-based devices under minority-carrier injection mode operation conditions are more radiation resistant than any other material-based devices.

Research Organization:
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki-ken 319-11, Japan
OSTI ID:
5191299
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:4; ISSN APPLA
Country of Publication:
United States
Language:
English