Minority-carrier injection-enhanced annealing of radiation damage to InGaP solar cells
- Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)
The observation of minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP is reported. 1-MeV electron irradiation results demonstrate superior radiation-resistance of InGa{sub 0.5}P{sub 0.5} solar cells compared to GaAs-on-Ge cells. Moreover, minority-carrier injection under forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP solar cell properties. These results suggest that the radiation-resistance of InGaP-based devices such as InGaP/GaAs(/Ge) multijunction solar cells and InGaP(As) light-emitting devices is further improved under minority-carrier injection condition. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 562897
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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