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Composition versus a/sub 0/ and T/sub c/ relations in superconducting Nb/sub 3/Ge thin films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.322391· OSTI ID:7176518
A large series of well-crystallized Nb/sub 3/Ge thin films have been prepared by carefully controlled rf sputtering. The compositions expressed as Nb/Ge ratios for these essentially single-phase Nb/sub 3/Ge thin films were determined by electron microprobe (EMP) analysis, ion scattering spectrometry, and wet chemistry (WC). Based on lattice-parameter considerations, this series of films spanned the entire homogeneity range of Nb/sub 3/Ge phases, from the metastable Ge-rich end (a/sub 0/<5.167 A) to the metastable Nb-rich end (a/sub 0/>5.176 A). The data from the different analytical methods and annealing experiments suggest that typical films are Ge enriched at the substrate interface and germanium and/or oxygen enriched for almost 600 A from the exposed surface. Intercorrelations of increased reliability have now been established between T/sub c/, the Nb/Ge ratio, and a/sub 0/. An extrapolation of the EMP Nb/Ge ratio versus a/sub 0/ and T/sub c/ data predict an a/sub 0/ of 5.127 A and a T/sub c/ of 23.4/sup 0/K for a phase of Nb/sub 3/Ge stoichiometry. The correlation between the EMP Nb/Ge ratio and a/sub 0/ obtained from a single-phase bulk Nb/sub 3/Ge sample was found to be in excellent agreement with the data obtained from the present study's rf-sputtered Nb/sub 3/Ge thin films. (AIP)
Research Organization:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
OSTI ID:
7176518
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:10; ISSN JAPIA
Country of Publication:
United States
Language:
English