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Title: Ion scattering and Auger electron spectrometry of superconducting ''Nb/sub 3/Ge'' sputtered films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.322464· OSTI ID:7142590

Low-energy ion scattering spectrometry (ISS) in conjunction with Auger electron spectrometry (AES) has been applied to the analysis of a series of superconducting ''Nb/sub 3/Ge'' thin films deposited on alumina substrates by rf sputtering. ISS was used to determine the Nb/Ge ratio as a function of depth, while AES in combination with ISS was used to determine the impurities. No gradients in composition with depth were observed except in a thin (approx.13% of the film thickness) niobium-deficient region near the film-alumina interface. The applicability of ISS to quantitative measurements of the Nb/Ge ratio was shown by comparing the variation of this ratio with lattice parameter a/sub 0/ with a similar analysis performed on the same samples using electron microprobe (EMP) measurements on the Nb and Ge composition. Comparison of the Nb/Ge ratio determined by ISS with EMP data showed that no preferential sputtering of Ge from the films occurred during neon ion bombardment. The variation of T/sub c/ with the Nb/Ge ratios determined by ISS and EMP supports the idea that for ''Nb/sub 3/Ge'', T/sub c/ increases as the composition approaches the stoichiometric ratio of 3:1. (AIP)

Research Organization:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
OSTI ID:
7142590
Journal Information:
J. Appl. Phys.; (United States), Vol. 47:11
Country of Publication:
United States
Language:
English