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Surface structure of high-T/sub c/ Nb/sub 3/Ge films

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00682022· OSTI ID:5557325
We have studied the surface structure of rf-sputtered Nb/sub 3/Ge films by means of reflection electron diffraction and Auger electron spectroscopy. It is found that a tetragonal Nb/sub 5/Ge/sub 3/ phase exists, being partly disordered, at the surface of high-T/sub c/ films, whereas A15 phase is predominant in the body of the film as proved by x-ray diffraction. The tetragonal surface phase is replaced by an amorphous phase in thin films of <1000 A, where reduced T/sub c/'s as compared with those of thick films are found. Single A15 phase occurs at the surface of Ge-deficient films whch have low T/sub c/'s. Auger analysis has shown a pronounced Ge-rich layer with a depth of 60-100 A, depending on film composition and thickness. At the top of the surface layer, Ge is enriched beyond a composition corresponding to Nb/sub 5/Ge/sub 3/. It is inferred that the Ge-rich layer is responsible for formation of the tetragonal phase.
Research Organization:
Research Institute of Applied Electricity, Hokkaido University, Sapporo, Japan
OSTI ID:
5557325
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 47:1; ISSN JLTPA
Country of Publication:
United States
Language:
English