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Correlation of homoepitaxial growth of high-T/sub c/ A15 Nb/sub 3/Ge with characteristics of substrate surface

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00682729· OSTI ID:6218671
Metastable Nb/sub 3/Ge films were prepared by coevaporation in an ultrahigh vacuum with homoepitaxial growth onto Nb-rich A15 Nb--Ge base layers having two types of surface characteristics: one was formed with a two-phase mixture of Nb--Ge and NbO, and the other had a clean Nb--Ge phase without any impurities. The homoepitaxial films grown on the former surface had more stable and reproducible higher T/sub c/ features than did those made on the latter surface. Compositional analysis near and at the interface between the homoepitaxial film and the base layer was made by Auger electron spectroscopy for representative samples and the oxide formed on the base layer was investigated by x-ray photoelectron spectroscopy.
Research Organization:
Department of Physics, Faculty of Science, Chiba University, Chiba, Japan
OSTI ID:
6218671
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 61:1; ISSN JLTPA
Country of Publication:
United States
Language:
English