Nucleation of high-T/sub c/ Nb/sub 3/Ge in the presence of impurities

Journal Article · Tue Aug 15 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90337· OSTI ID:6807874

Gavaler, J R; Ashkin, M; Braginski, A I; Santhanam, A T

Analyses of high-T/sub c/ Nb/sub 3/Ge films show that they all have a peak in oxygen concentration near the substrate-film interface and that their lattice parameters in that region are abnormally large. It is proposed that high-T/sub c/ Nb/sub 3/Ge is a metastable phase which is formed via a homoepitaxial process from a large lattice parameter A15 Nb-Ge phase. This phase near the interface is believed stable due to an expanded lattice resulting from the presence of impurities.

• Research Organization: Westinghouse RandD Center, Pittsburgh, Pennsylvania 15235
• OSTI ID: 6807874
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ALLOYS
CRYOGENIC FLUIDS
ELEMENTS
ENERGY LEVELS
EPITAXY
EXCITED STATES
FILMS
FLUIDS
GERMANIUM ALLOYS
IMPURITIES
INTERFACES
LATTICE PARAMETERS
METASTABLE STATES
NIOBIUM ALLOYS
NIOBIUM BASE ALLOYS
NONMETALS
NUCLEATION
OXYGEN
PHASE STUDIES
PHYSICAL PROPERTIES
SUPERCONDUCTORS
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
TYPE-II SUPERCONDUCTORS