New trends in semiconductor infrared detectors

Journal Article · Sun May 01 00:00:00 EDT 1994 · Optical Engineering; (United States)

DOI:https://doi.org/10.1117/12.165821· OSTI ID:7173439

Rogalski, A ^[1]

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1. Military Academy of Technology, Warsaw (Poland). Inst. of Technical Physics

Recent efforts in semiconductor IR detector research have been directed toward improving the performance of single-element devices, large electronically scanned arrays, and higher operation temperature. Another important aim is to make IR detectors cheaper and more convenient to use. New trends in semiconductor IR detector technologies are discussed, including HgCdTe photodiodes, Schottky-barrier photoemissive devices, alternatives to HgCdTe ternary alloys, monolithic lead-chalcogenide photodiodes, GaAs/AlGaAs intersubband quantum well photoconductors, and ways to improve the performance of near-room-temperature detectors. A comparison of different types of detectors with the present stage of HgCdTe technology achievements is undertaken.

• OSTI ID: 7173439
• Journal Information: Optical Engineering; (United States), Journal Name: Optical Engineering; (United States) Vol. 33:5; ISSN 0091-3286; ISSN OPEGAR
• Country of Publication: United States
• Language: English

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47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
COST
DETECTION
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFRARED RADIATION
MEASURING INSTRUMENTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
PNICTIDES
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
TECHNOLOGY ASSESSMENT
TELLURIDES
TELLURIUM COMPOUNDS