X-ray response of AlGaAs/GaAs radiation-hardened double-heterostructure photodiode compared to Si:p-i-n photodiodes

Journal Article · Mon Aug 01 00:00:00 EDT 1988 · Rev. Sci. Instrum.; (United States)

DOI:https://doi.org/10.1063/1.1140078· OSTI ID:7123487

Anthes, J P

Requirements for continuous operation of photodiodes in the presence of nuclear radiation has led to the development of a novel AlGaAs/GaAs photodiode. Device structure and semiconductor properties of this design were optimized to balance the need for photodetection at lambda = 820 nm against unwanted excess photocurrents induced by ionizing radiation. To achieve radiation hardness the photodiode employs a double-heterojunction device structure. The spectral response of this detector, 1 keV--10 MeV, may offer unique opportunities for use in high-temperature plasma diagnostics compared to typical bare Si:p-i-n x-ray photodiode characteristics. Application of this AlGaAs/GaAs detector in a fiber-optic link will be reviewed. Also, use of this detector in simple atomic-absorption-edge filtered x-ray detector channels is presented.

• Research Organization: Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185
• OSTI ID: 7123487
• Journal Information: Rev. Sci. Instrum.; (United States), Journal Name: Rev. Sci. Instrum.; (United States) Vol. 59:8; ISSN RSINA
• Country of Publication: United States
• Language: English

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ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELECTROMAGNETIC RADIATION
FIBERS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZING RADIATIONS
NATIONAL ORGANIZATIONS
OPTICAL FIBERS
OPTIMIZATION
PERFORMANCE
PHOTODIODES
PLASMA DIAGNOSTICS
PNICTIDES
RADIATIONS
RESPONSE FUNCTIONS
SANDIA LABORATORIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
US AEC
US DOE
US ERDA
US ORGANIZATIONS
X RADIATION