Coherent, monolithic two-dimensional strained InGaAs/AlGaAs quantum well laser arrays using grating surface emission

Journal Article · Mon Dec 25 04:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102256· OSTI ID:7170184

Evans, G A; Bour, D P; Carlson, N W; Hammer, J M; Lurie, M; Butler, J K; Palfrey, S L; Amantea, R; Carr, L A; Hawrylo, F Z; James, E A; Kirk, J B; Liew, S K; Reichert, W F ^[1]

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1. David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300 (US)

Two-dimensional coherent strained-layer InGaAs/AlGaAs quantum well laser arrays consisting of 100 (10{times}10) active elements have been fabricated and characterized. The central lobe of the far field has a full width at half power of 0.04{degree}{times}1{degree}. Observation of about 2 W peak power from either the substrate or the junction surface, with differential quantum efficiencies from each side of about 40%, is reported. The mode spectrum of the emitted power is contained in a {similar to}2 A wavelength interval at {similar to}2 W.

• OSTI ID: 7170184
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:26; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
POWER RANGE
POWER RANGE 01-10 W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
WATT POWER RANGE