Gain characteristics of strained quantum well lasers

Journal Article · Sun Dec 31 23:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102647· OSTI ID:7170168

Welch, D F; Streifer, W ^[1]; Schaus, C F; Sun, S ^[2]; Gourley, P L ^[3]

---

1. Spectra Diode Laboratories, 80 Rose Orchard Way, San Jose, California 95134 (US)
2. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131 (USA)
3. Sandia National Laboratories, Albuquerque, New Mexico 87175 (USA)

InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm{sup 2}, transparency currents of 50 A/cm{sup 2}, optical losses of 3 cm{sup {minus}1}, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient measurements indicate an increase from 0.0535 to 0.0691 cm {mu}m/A for quantum well lasers with 0% InAs and 10--20% InAs, respectively. The maximum output power achieved for a device with a 100 {mu}m aperture is 3 W cw.

• OSTI ID: 7170168
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:1; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FABRICATION
GAIN
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
LASERS
NEAR INFRARED RADIATION
OPERATION
PNICTIDES
POWER
POWER RANGE
POWER RANGE 01-10 W
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STRAINS
SUPERLATTICES
THRESHOLD CURRENT
WATT POWER RANGE