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Effect of faceting on the band gap of ordered GaInP

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.112188· OSTI ID:7166579
; ; ; ;  [1];  [2]
  1. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)
  2. National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80303 (United States)
It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap [ital E][sub [ital g]] from that of the disordered alloy. The [ital E][sub [ital g]] lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of [ital E][sub [ital g]] on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, [ital E][sub [ital g]] decreases dramatically with increasing epilayer thickness: [ital E][sub [ital g]] for a 10-[mu]m-thick epilayer is [similar to]40 meV lower than for a 1-[mu]m-thick epilayer. This dependence of [ital E][sub [ital g]] on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.
DOE Contract Number:
AC36-83CH10093
OSTI ID:
7166579
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:7; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English