Effects of substrate misorientation and growth rate on ordering in GaInP

Journal Article · Sun May 15 00:00:00 EDT 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.355759· OSTI ID:7274136

Su, L C; Ho, I H; Stringfellow, G B ^[1]

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1. Departments of Materials Science and Engineering and Electrical Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

Epitaxial layers of Ga[sub [ital x]]In[sub 1[minus][ital x]]P with [ital x][approx]0.52 have been grown by organometallic vapor-phase epitaxy on GaAs substrates misoriented from the (001) plane in the [[bar 1]10] direction by angles [var theta][sub [ital m]], of 0[degree], 3[degree], 6[degree], and 9[degree]. For each substrate orientation growth rates [ital r][sub [ital g]] of 1, 2, and 4 [mu]m/h have been used. The ordering was characterized using transmission electron diffraction (TED), dark-field imaging, and photoluminescence. The (110) cross-sectional images show domains of the Cu-Pt structure separated by antiphase boundaries (APBs). The domain size and shape and the degree of order are found to be strongly affected by both the substrate misorientation and the growth rate. For example, lateral domain dimensions range from 50 A for layers grown with [ital r][sub [ital g]]=4 [mu]m/h and [var theta][sub [ital m]]=0[degree] to 2500 A for [ital r][sub [ital g]]=1 [mu]m/h and [var theta][sub [ital m]]=9[degree]. The APBs generally propagate from the substrate/epilayer interface to the top surface at an angle to the (001) plane that increases dramatically as the angle of misorientation increases. The angle is nearly independent of growth rate. From the superspot intensities in the TED patterns, the degree of order appears to be a maximum for [var theta][sub [ital m]][approx]5[degree]. Judging from the reduction in photoluminescence peak energy caused by ordering, the maximum degree of order appears to occur at [var theta][sub [ital m]][approx]4[degree].

• OSTI ID: 7274136
• Journal Information: Journal of Applied Physics; (United States), Vol. 75:10; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM PHOSPHIDES
VAPOR PHASE EPITAXY
INDIUM PHOSPHIDES
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
GRAIN ORIENTATION
PHOTOLUMINESCENCE
SUBSTRATES
COHERENT SCATTERING
DIFFRACTION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MICROSCOPY
MICROSTRUCTURE
ORIENTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
360602* - Other Materials- Structure & Phase Studies