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Single liquid-source plasma enhanced metalorganic chemical vapor deposition of YBa sub 2 Cu sub 3 O sub 7-x thin films. Technical report

Technical Report ·
OSTI ID:7162901

High quality YBa2Cu3O7-x films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd)n, (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction. measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7-x was formed in-situ at a substrate temperature 680 degC. The as-deposited films exhibited a mirror-like surface, had transition temperature Tc = 89 K, Delta Tc < 1K, and Jc(77K) = 106 A/cm2. Plasma enhanced metalorganic chemical vapor deposition, YBCO, superconductors.

Research Organization:
Advanced Technology Materials, Inc., Danbury, CT (United States)
OSTI ID:
7162901
Report Number(s):
AD-A-254119/1/XAB; ATM--52; CNN: N00014-90-C-0201
Country of Publication:
United States
Language:
English