MOCVD of very thin films of lead lanthanum titanate
Films of lead lanthanum titanate were deposited using metal-organic chemical vapor deposition (MOCVD) at temperatures between 500 and 550{degrees}C in a hot-wall reactor. The precursors used were Pb(THD){sub 2}, La(THD){sub 3}, and Ti(THD){sub 2}(I-OPr){sub 2} where THD = 2,2,6,6-tetramethyl-3,5-heptanedionate, O{sub 2}C{sub 11}H{sub 19}, and I-OPr = isopropoxide, OC{sub 3}H{sub 7}. The three precursors were delivered to the reactor using a single solution containing all three precursors dissolved in tetraglyme and the precursor solution was volatilized at 225{degrees}C. Films were deposited on Si and Si/Ti/Pt substrates, and characterized using Rutherford Backscattering Spectroscopy (RPS) and X-ray diffraction(XRD). Films deposited at 550{degrees}C had a composition which was close to that of the precursor solution while films deposited at 500{degrees}C were deficient in lanthanum. Even at 500{degrees}C, the desired perovskite phase showed an increase in the intensity of the X-ray lines, but did not change the width of these lines, implying the grain sizes had remained unchanged.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 230282
- Report Number(s):
- CONF-951155--104; ON: DE96008613
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thermodynamic analysis of Ba-Sr-Ti oxide film compositions in the process of metallorganic chemical vapor deposition
Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition