GaAs(111) A -(2 times 2) reconstruction studied by scanning tunneling microscopy

Journal Article · Thu Feb 15 04:00:00 EST 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.3226· OSTI ID:7160897

Haberern, K W; Pashley, M D ^[1]

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1. Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510 (US)

Atomic-resolution scanning tunneling microscope (STM) images have been obtained from the GaAs(111){ital A} (gallium-terminated) surface. The STM images conclusively show that the (2{times}2) periodicity arises from a regular array of gallium vacancies in agreement with a previously proposed model. It is shown that this reconstruction is explained by the reduction in energy that is achieved by the complete transfer of electrons from gallium dangling bonds into arsenic dangling bonds, which are then exactly filled.

• OSTI ID: 7160897
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:5; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MICROSCOPY
PNICTIDES
POINT DEFECTS
SCANNING ELECTRON MICROSCOPY
TUNNEL EFFECT
VACANCIES