Scanning tunneling microscopy of molecular-beam epitaxially grown GaAs (001) surfaces

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7237797

Tanaka, Ichiro; Ohkouchi, Shunsuke; Kato, Takashi; Osaka, Fukunobu ^[1]

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1. Optoelectronics Technology Research Lab., Ibaraki (Japan)

A multichamber ultrahigh vacuum (UHV) scanning tunneling microscope (STM) system which includes a molecular-beam epitaxy (MBE) growth chamber, as well as a STM chamber, has been constructed for the investigation of processed GaAs surfaces. The authors observed MBE-grown GaAs surfaces using this system. Samples were grown on GaAs (001) surfaces and cooled to certain temperatures in an As{sub 4} flux before being transferred into an UHV. STM images of c(4{times}4), 2 {times} 4, and mixed c(4 {times} 2) and 2 {times} 2 structures were obtained for the samples cooled to 330, 570, and 470C in an As{sub 4} flux, respectively. The mixed c(4 {times} 2) and 2 {times} 2 structure seems to be formed by desorption of As atoms from the c(4 {times} 4) surface in an UHV. Also, a new reconstructed structure which has a 2.8-nm periodicity along both the (110) and (110) directions was observed. It seems to be a local structure which has a larger arsenic dimer density than that of the c(4 {times} 4) structure.

• OSTI ID: 7237797
• Report Number(s): CONF-910115--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
DIMERS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SEMIMETALS
ULTRAHIGH VACUUM