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Scanning tunneling microscopy of molecular-beam epitaxially grown GaAs (001) surfaces

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7237797
; ; ;  [1]
  1. Optoelectronics Technology Research Lab., Ibaraki (Japan)

A multichamber ultrahigh vacuum (UHV) scanning tunneling microscope (STM) system which includes a molecular-beam epitaxy (MBE) growth chamber, as well as a STM chamber, has been constructed for the investigation of processed GaAs surfaces. The authors observed MBE-grown GaAs surfaces using this system. Samples were grown on GaAs (001) surfaces and cooled to certain temperatures in an As{sub 4} flux before being transferred into an UHV. STM images of c(4{times}4), 2 {times} 4, and mixed c(4 {times} 2) and 2 {times} 2 structures were obtained for the samples cooled to 330, 570, and 470C in an As{sub 4} flux, respectively. The mixed c(4 {times} 2) and 2 {times} 2 structure seems to be formed by desorption of As atoms from the c(4 {times} 4) surface in an UHV. Also, a new reconstructed structure which has a 2.8-nm periodicity along both the (110) and (110) directions was observed. It seems to be a local structure which has a larger arsenic dimer density than that of the c(4 {times} 4) structure.

OSTI ID:
7237797
Report Number(s):
CONF-910115--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English

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