Inhomogeneous gain saturation in a mode-locked semiconductor laser

Journal Article · Mon Jul 18 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100164· OSTI ID:7159255

Serenyi, M; Goebel, E O; Kuhl, J

The saturation of the light-dc prebias current characteristic of an actively mode-locked GaAs/AlGaAs semiconductor laser with external resonator reveals a pronounced dependence on lasing wavelength and peak intensity of the mode-locked pulses. The latter effect is attributed to inhomogeneous gain saturation.

• Research Organization: Philipps-Universitaet, Fachbereich Physik, Renthof 5, D-3550 Marburg, Federal Republic of Germany
• OSTI ID: 7159255
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
INFORMATION
LASER CAVITIES
LASER RADIATION
LASERS
LIFETIME
MODE LOCKING
NUMERICAL DATA
PNICTIDES
RADIATIONS
RESONATORS
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS