Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

Journal Article · Wed Nov 29 23:00:00 EST 2006 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2006V036N11ABEH013221· OSTI ID:21456907

Vasil'ev, Petr P ^[1]; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A ^[2]

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1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
2. Central Research Lab, Hamamatsu Photonics K.K. (Japan)

A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)

• OSTI ID: 21456907
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 11 Vol. 36; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
EMISSION
EMISSION SPECTRA
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
LASER CAVITIES
LASERS
LUMINESCENCE
MODE LOCKING
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
PULSES
QUANTUM WELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
TUNING
WAVELENGTHS