Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
We have studied the dynamical behavior of laser emission in optically pumped GaAs/AlGaAs lasers with picosecond time resolution. We find a saturation of the spontaneous emission above threshold and a homogeneous reduction of carrier lifetime down to about 70 ps. These data suggest a homogeneous gain saturation in GaAs/AlGaAs quantum well lasers, similar to conventional double heterostructure lasers.
- Research Organization:
- Max--Planck-Institut fuer Festkoerperforschung, Heisenbergstresse 1, 7000 Stuttgart 80, Federal Republic of Germany
- OSTI ID:
- 5318992
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:8; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
DATA
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER RADIATION
LASERS
LIFETIME
NUMERICAL DATA
OPTICAL PUMPING
PNICTIDES
PUMPING
RADIATIONS
RESOLUTION
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
DATA
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER RADIATION
LASERS
LIFETIME
NUMERICAL DATA
OPTICAL PUMPING
PNICTIDES
PUMPING
RADIATIONS
RESOLUTION
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS