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Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.96036· OSTI ID:5318992

We have studied the dynamical behavior of laser emission in optically pumped GaAs/AlGaAs lasers with picosecond time resolution. We find a saturation of the spontaneous emission above threshold and a homogeneous reduction of carrier lifetime down to about 70 ps. These data suggest a homogeneous gain saturation in GaAs/AlGaAs quantum well lasers, similar to conventional double heterostructure lasers.

Research Organization:
Max--Planck-Institut fuer Festkoerperforschung, Heisenbergstresse 1, 7000 Stuttgart 80, Federal Republic of Germany
OSTI ID:
5318992
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:8; ISSN APPLA
Country of Publication:
United States
Language:
English

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