Field effect on the gain coefficient in a GaAs-AlGaAs single-quantum-well laser

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.344909· OSTI ID:7120660

Huang, F Y ^[1]

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1. School of Electrical Engineering School of Electronic Engineering, University of Bath, Bath BA2 7AY, United Kingdom (GB)

The gain coefficient of a GaAs-AlGaAs single-quantum-well laser in an applied static electric field is calculated. The quasi-bound-state energy and the lifetime are obtained by using the tunneling resonance technique. The principal field effects on the laser emission are (i) shift of the laser wavelength, (ii) reduction and broadening of the gain spectrum, and (iii) increase of the threshold current. Based on the field-dependent shift of the peak gain position, a possible wavelength tuning mechanism for the quantum-well laser is proposed.

• OSTI ID: 7120660
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:9; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC FIELDS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
PNICTIDES
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TUNNEL EFFECT