Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

Journal Article · Mon Feb 22 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99647· OSTI ID:5484905

Blood, P; Colak, S; Kucharska, A I

We have calculated the threshold current and its temperature (T) dependence in the range 200--400 K for AlGaAs quantum well lasers with 25-A-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T/sub 0/ is increased to approx. =400 K, compared with approx. =320 K without broadening. The calculations are compared with experimental data.

• Research Organization: Philips Research Laboratories, Redhill, Surrey RH1 5HA, England
• OSTI ID: 5484905
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
FLUCTUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
INFORMATION
LASERS
MATHEMATICAL MODELS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THEORETICAL DATA
THRESHOLD CURRENT
VARIATIONS