Calculated threshold current of GaAs quantum well lasers

Journal Article · Mon Nov 01 04:00:00 EST 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331617· OSTI ID:6730993

Dutta, N K

A model calculation of the threshold current of a laser in a quantum well structure is presented. The band-to-band radiative recombination rate is calculated using a constant density of states and the k-selection rule. This calculation shows that the threshold current of a GaAs single quantum well laser has low-temperature sensitivity (T/sub 0/approx.330 K for T>300 K). The calculated threshold current of a 200-A-wide GaAs single quantum well laser is approx.550 A/cm/sup 2/. The results of the calculation are compared with experimental results.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6730993
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ENERGY-LEVEL DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
NUMERICAL DATA
PNICTIDES
RECOMBINATION
SELECTION RULES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SENSITIVITY
TEMPERATURE DEPENDENCE
THEORETICAL DATA
THRESHOLD CURRENT