Mode locking of semiconductor diode lasers using saturable excitonic nonlinearities

Journal Article · Mon Jul 01 04:00:00 EDT 1985 · J. Opt. Soc. Am. B: Opt. Phys.; (United States)

DOI:https://doi.org/10.1364/JOSAB.2.001228· OSTI ID:5573918

Smith, P W; Silberberg, Y; Miller, D A.B.

Multiple-quantum-well (MQW) structures of GaAs and GaAlAs have been used for passive mode locking of commercial GaAs semiconductor diode lasers. We present an extended discussion of this application of the sensitive room-temperature excitonic absorption saturation in MQW material. We review the criteria for passive mode locking and discuss two methods-carrier diffusion and proton bombardment-for reducing the absorption recovery time without destroying the excitonic nonlinearity. A simple probabilistic theory is derived for the effect of bombardment on the excitonic effects that is in order-of-magnitude agreement with experiment. We have performed experiments using MQW material to mode lock a GaAs laser. A continuous train of pulses as narrow as 1.6 psec has been obtained with a pulse-repetition rate of 2 GHz.

• Research Organization: Bell Communications Research, Inc., Holmdel, New Jersey 07733
• OSTI ID: 5573918
• Journal Information: J. Opt. Soc. Am. B: Opt. Phys.; (United States), Journal Name: J. Opt. Soc. Am. B: Opt. Phys.; (United States) Vol. 2:7; ISSN JOBPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CARRIER LIFETIME
CHARGED PARTICLES
EXCITONS
FOCUSING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONS
LASERS
LIFETIME
MODE LOCKING
NONLINEAR OPTICS
NUCLEON BEAMS
OPTICS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POTENTIALS
PROTON BEAMS
PULSES
QUASI PARTICLES
RADIATION EFFECTS
RECOMBINATION
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SENSITIVITY