Overview of radiation-induced interface traps in MOS (metal-oxide semiconductor) structures. Final report, 74-88

Technical Report · Tue Oct 31 23:00:00 EST 1989

OSTI ID:7154240

Oldham, T R; McLean, F B; Boesch, H E; McGarrity, J M

We focus on radiation-induced interface traps, describing first how they fit into the overall radiation response of metal-oxide semiconductor (MOS) structures. Detailed measurements of the time-, field-, and temperature-dependences of the buildup of radiation-induced interface traps indicate three processes by which the buildup occurs. The largest of these is the slow two-stage process described by McLean and coworkers, which is rate limited by the hopping transport of hydrogen ions. Two other faster processes also contribute small interface trap buildups in gate oxides. The processes seem to be controlled by hole transport to the Si/SiO2 interface and by neutral hydrogen diffusion, respectively. We also discuss several models which fall into three classes, corresponding roughly to the three processes observed experimentally. Other topics discussed briefly are dose dependence, field oxide effects, chemical and processing dependences, and scaling effects.

• Research Organization: Harry Diamond Labs., Adelphi, MD (USA)
• OSTI ID: 7154240
• Report Number(s): AD-A-216101/6/XAB; HDL-TR--2163
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHARGED PARTICLES
DIFFUSION
DOCUMENT TYPES
ELECTRONIC CIRCUITS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GATING CIRCUITS
HOLES
HYDROGEN
INTERFACES
IONS
LEPTONS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PROCESSING
PROGRESS REPORT
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRAPS