Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/AsInP and InGaAs-InAlAs superlattices: Progress report for the period February 1, 1987-December 31, 1987
Focus of the work was to grow wide-bandgap ternary and quaternary semiconductors InAlAs and InGaAlAs by molecular beam epitaxy and to investigate their electronic, optical and structural characteristics. Techniques being used are x-ray, TEM, photoluminescence and absorption, DLTS, Hall transport, and Raman Spectroscopy. Experiments included both lattice matched and strained layers. We have grown a series of InGaAlAs quaternary alloys lattice matched to InP, covering the bandgap range from 0.75 to 1.45 eV. Low-temperature photoluminescence measurements indicate that the layers are possibly the best ever grown. The excitonic linewidths are extremely narrow and indicate minimal amounts of clustering. The hole lifetimes in the alloys are comparable to those in high-purity GaAs. Deep levels in these alloys are being investigated and several dominant trap centers have been identified. Studies are under way to establish their physico-chemical origin. Preliminary Raman Spectroscopy measurements have been done on the same samples and the data are being analyzed. Intention is to establish the GaAs, AlAs and InAs-like phonon spectra as a function of composition. We have realized the narrowest PL excitonic linewidths in InGaAs/GaAs MQWs. The linewidths /approximately/ 1-2 meV are almost a factor of 3 better than anything ever reported previously. A proper understanding of strained layer epitaxy by non-equilibrium growth techniques such as MBE is emerging for the first time. 27 figs., 2 tabs.
- Research Organization:
- Michigan Univ., Ann Arbor (USA)
- DOE Contract Number:
- FG02-86ER45250
- OSTI ID:
- 7149973
- Report Number(s):
- DOE/ER/45250-1; ON: DE88009105
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for the period May 15, 1986-January 31, 1987
Investigation of the MBE growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for May 15, 1986--August 1, 1988
Related Subjects
42 ENGINEERING
ALUMINIUM ARSENIDES
ELECTRICAL PROPERTIES
MOLECULAR BEAM EPITAXY
SUPERLATTICES
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
CARRIER LIFETIME
DOPED MATERIALS
ELECTRON DIFFRACTION
HOLES
PHOTOLUMINESCENCE
PROGRESS REPORT
RAMAN SPECTROSCOPY
SILICON ADDITIONS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
DOCUMENT TYPES
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASER SPECTROSCOPY
LIFETIME
LUMINESCENCE
MATERIALS
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SILICON ALLOYS
SPECTROSCOPY
360603* - Materials- Properties
420800 - Engineering- Electronic Circuits & Devices- (-1989)