Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for the period May 15, 1986-January 31, 1987
Technical Report
·
OSTI ID:6882947
Focus of the work has been to grow wide-bandgap ternary and quaternary semiconductors InAlAs and InGaAlAs by molecular beam epitaxy and to investigate their electronic, optical and structural characteristics. The techniques being used are x-ray, TEM, photoluminescence and absorption, DLTS, Hall transport, impact ionization and pulsed velocity field measurements. The experiments have included both lattice matched and strained layers. It is apparent that the lattice match In/sub 0.52/Al/sub 0.48/As/InP alloys are clustered and dominant D-X trap centers are present in the strained compositions. We are investigating a novel MBE growth technique of growing these alloys directly on GaAs (with a 1 to 4% lattice mismatch) without propagating dislocations. These heteroepitaxial layers and interfaces are being studied by TEM.
- Research Organization:
- Michigan Univ., Ann Arbor (USA)
- DOE Contract Number:
- FG02-86ER45250
- OSTI ID:
- 6882947
- Report Number(s):
- DOE/ER/45250-1; ON: DE87005190
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation on the MBE growth and properties of AlGaInAs/InP and InGaAs-InAlAs superlattices
Investigation of the MBE growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for May 15, 1986--August 1, 1988
Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/AsInP and InGaAs-InAlAs superlattices: Progress report for the period February 1, 1987-December 31, 1987
Technical Report
·
Thu Nov 30 23:00:00 EST 1989
·
OSTI ID:7122247
Investigation of the MBE growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for May 15, 1986--August 1, 1988
Technical Report
·
Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:7127473
Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/AsInP and InGaAs-InAlAs superlattices: Progress report for the period February 1, 1987-December 31, 1987
Technical Report
·
Wed Dec 31 23:00:00 EST 1986
·
OSTI ID:7149973
Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
ENERGY LEVELS
EPITAXY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONIZATION
LEPTONS
LUMINESCENCE
MICROSCOPY
MOBILITY
MOLECULAR BEAMS
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RESEARCH PROGRAMS
SCATTERING
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
TRAPS
X-RAY DIFFRACTION
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
ENERGY LEVELS
EPITAXY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONIZATION
LEPTONS
LUMINESCENCE
MICROSCOPY
MOBILITY
MOLECULAR BEAMS
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RESEARCH PROGRAMS
SCATTERING
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
TRAPS
X-RAY DIFFRACTION