Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for the period May 15, 1986-January 31, 1987
Focus of the work has been to grow wide-bandgap ternary and quaternary semiconductors InAlAs and InGaAlAs by molecular beam epitaxy and to investigate their electronic, optical and structural characteristics. The techniques being used are x-ray, TEM, photoluminescence and absorption, DLTS, Hall transport, impact ionization and pulsed velocity field measurements. The experiments have included both lattice matched and strained layers. It is apparent that the lattice match In/sub 0.52/Al/sub 0.48/As/InP alloys are clustered and dominant D-X trap centers are present in the strained compositions. We are investigating a novel MBE growth technique of growing these alloys directly on GaAs (with a 1 to 4% lattice mismatch) without propagating dislocations. These heteroepitaxial layers and interfaces are being studied by TEM.
- Research Organization:
- Michigan Univ., Ann Arbor (USA)
- DOE Contract Number:
- FG02-86ER45250
- OSTI ID:
- 6882947
- Report Number(s):
- DOE/ER/45250-1; ON: DE87005190
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation on the MBE growth and properties of AlGaInAs/InP and InGaAs-InAlAs superlattices
Investigation of the MBE growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for May 15, 1986--August 1, 1988
Related Subjects
ALUMINIUM ARSENIDES
PHYSICAL PROPERTIES
SUPERLATTICES
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ELECTRON MOBILITY
ELECTRONS
ENERGY LEVELS
EPITAXY
HALL EFFECT
IONIZATION
MOLECULAR BEAMS
PHOTOLUMINESCENCE
RESEARCH PROGRAMS
TRANSMISSION ELECTRON MICROSCOPY
TRAPS
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LEPTONS
LUMINESCENCE
MICROSCOPY
MOBILITY
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
360603* - Materials- Properties
360601 - Other Materials- Preparation & Manufacture