Investigation of the MBE growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for May 15, 1986--August 1, 1988
Technical Report
·
OSTI ID:7127473
The focus of the work has been to grow wide-bandgap ternary and quaternary semiconductors InAlAs and InGaAlAs by molecular beam epitaxy and to investigate their electronic, optical and structural characteristics. The techniques being used are x-ray, TEM, photoluminescence and absorption, DLTS, Hall transport, and Raman Spectroscopy. The experiments have included both lattice matched and strained layers. Several new results have been obtained. 16 refs. 4 figs.
- Research Organization:
- Michigan Univ., Ann Arbor (USA). Dept. of Electrical Engineering and Computer Science
- DOE Contract Number:
- FG02-86ER45250
- OSTI ID:
- 7127473
- Report Number(s):
- DOE/ER/45250-2; ON: DE88015477
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation on the MBE growth and properties of AlGaInAs/InP and InGaAs-InAlAs superlattices
Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for the period May 15, 1986-January 31, 1987
Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/AsInP and InGaAs-InAlAs superlattices: Progress report for the period February 1, 1987-December 31, 1987
Technical Report
·
Thu Nov 30 23:00:00 EST 1989
·
OSTI ID:7122247
Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for the period May 15, 1986-January 31, 1987
Technical Report
·
Wed Dec 31 23:00:00 EST 1986
·
OSTI ID:6882947
Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/AsInP and InGaAs-InAlAs superlattices: Progress report for the period February 1, 1987-December 31, 1987
Technical Report
·
Wed Dec 31 23:00:00 EST 1986
·
OSTI ID:7149973
Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOCUMENT TYPES
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
PROGRESS REPORT
SEMICONDUCTOR MATERIALS
SUPERLATTICES
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOCUMENT TYPES
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
PROGRESS REPORT
SEMICONDUCTOR MATERIALS
SUPERLATTICES