Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/AsInP and InGaAs-InAlAs superlattices: Progress report for the period February 1, 1987-December 31, 1987

Technical Report · Thu Jan 01 04:00:00 EST 1987

OSTI ID:7149973

Bhattacharya, P K; Gibala, R

Focus of the work was to grow wide-bandgap ternary and quaternary semiconductors InAlAs and InGaAlAs by molecular beam epitaxy and to investigate their electronic, optical and structural characteristics. Techniques being used are x-ray, TEM, photoluminescence and absorption, DLTS, Hall transport, and Raman Spectroscopy. Experiments included both lattice matched and strained layers. We have grown a series of InGaAlAs quaternary alloys lattice matched to InP, covering the bandgap range from 0.75 to 1.45 eV. Low-temperature photoluminescence measurements indicate that the layers are possibly the best ever grown. The excitonic linewidths are extremely narrow and indicate minimal amounts of clustering. The hole lifetimes in the alloys are comparable to those in high-purity GaAs. Deep levels in these alloys are being investigated and several dominant trap centers have been identified. Studies are under way to establish their physico-chemical origin. Preliminary Raman Spectroscopy measurements have been done on the same samples and the data are being analyzed. Intention is to establish the GaAs, AlAs and InAs-like phonon spectra as a function of composition. We have realized the narrowest PL excitonic linewidths in InGaAs/GaAs MQWs. The linewidths /approximately/ 1-2 meV are almost a factor of 3 better than anything ever reported previously. A proper understanding of strained layer epitaxy by non-equilibrium growth techniques such as MBE is emerging for the first time. 27 figs., 2 tabs.

• Research Organization: Michigan Univ., Ann Arbor (USA)
• DOE Contract Number: FG02-86ER45250
• OSTI ID: 7149973
• Report Number(s): DOE/ER/45250-1; ON: DE88009105
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
COHERENT SCATTERING
DIFFRACTION
DOCUMENT TYPES
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER SPECTROSCOPY
LIFETIME
LUMINESCENCE
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
PROGRESS REPORT
RAMAN SPECTROSCOPY
SCATTERING
SILICON ADDITIONS
SILICON ALLOYS
SPECTROSCOPY
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION