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Title: Chemoresistive gas sensor

Abstract

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.

Inventors:
Publication Date:
OSTI Identifier:
7148120
Patent Number(s):
US 4674320; A
Application Number:
PPN: US 6-781543
Assignee:
Dept. of Energy, Washington, DC (United States) PTO; EDB-94-124737
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Patent File Date: 30 Sep 1985
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; GASES; QUANTITATIVE CHEMICAL ANALYSIS; MEASURING INSTRUMENTS; DESIGN; OPERATION; ORGANIC SEMICONDUCTORS; SORPTION; SORPTIVE PROPERTIES; CHEMICAL ANALYSIS; FLUIDS; MATERIALS; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; 400102* - Chemical & Spectral Procedures

Citation Formats

Hirschfeld, T.B. Chemoresistive gas sensor. United States: N. p., 1987. Web.
Hirschfeld, T.B. Chemoresistive gas sensor. United States.
Hirschfeld, T.B. Tue . "Chemoresistive gas sensor". United States.
@article{osti_7148120,
title = {Chemoresistive gas sensor},
author = {Hirschfeld, T.B.},
abstractNote = {A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {6}
}