Chemoresistive gas sensor
Patent
·
OSTI ID:7148120
A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- A; US 4674320
- Application Number:
- PPN: US 6-781543
- OSTI ID:
- 7148120
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400102* -- Chemical & Spectral Procedures
CHEMICAL ANALYSIS
DESIGN
FLUIDS
GASES
MATERIALS
MEASURING INSTRUMENTS
OPERATION
ORGANIC SEMICONDUCTORS
QUANTITATIVE CHEMICAL ANALYSIS
SEMICONDUCTOR MATERIALS
SORPTION
SORPTIVE PROPERTIES
SURFACE PROPERTIES
400102* -- Chemical & Spectral Procedures
CHEMICAL ANALYSIS
DESIGN
FLUIDS
GASES
MATERIALS
MEASURING INSTRUMENTS
OPERATION
ORGANIC SEMICONDUCTORS
QUANTITATIVE CHEMICAL ANALYSIS
SEMICONDUCTOR MATERIALS
SORPTION
SORPTIVE PROPERTIES
SURFACE PROPERTIES