Chemoresistive gas sensor

Patent · 01 January 1987

OSTI ID:866284

Hirschfeld, Tomas B ^[1]

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1. Livermore, CA

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4674320
• OSTI ID: 866284
• Country of Publication: United States
• Language: English

Related Subjects

/73/338/427/
adsorption
average
chemoresistive
chemoresistive gas
conductivity
conductivity material
connected
contaminant
current
current flow
dispersed
disposed
electrodes
electron
flow
form
funneling
gas
gas sensor
gaseous
gaseous contaminant
improved
improved sensitivity
interisland
islands
layer
manner
material
mode
modulates
organic
organic semiconductor
particles
predominant
provided
quantitative
selected
semiconductor
sensitivity
sensor
source
spacing
tunneling
tunneling current
voltage
voltage source